Efficient lateral minority carrier transport in proton-implanted p -type silicon

作者：D. Leung, Paul R. Nelson, O. M. Stafsudd, John Parkinson, G. E. Davis · 发表于：Applied Physics Letters · 年份：1995 · DOI：10.1063/1.115517 · 被引用次数：4 · 研究领域：Silicon and Solar Cell Technologies、Semiconductor materials and interfaces、Thin-Film Transistor Technologies

A highly efficient lateral transport mechanism has been observed in stable defect layers (SDL) in p-type silicon. The SDLs were produced by proton implantation followed by rapid thermal anneal. Photogenerated carriers have been collected at a Schottky junction several millimeters away from the generation site. This transport distance is more than 30 times the diffusion length in comparable bulk material. A model is proposed in which bending of the energy bands near the SDL expels majority carriers, leaving no substantial recombination mechanism for minority carriers trapped in the layer.