Epitaxial growth of β‐Si 3 N 4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β‐Si 3 N 4 /Si(111)

作者：Nobuhiko Yamabe, Yuka Yamamoto, T. Ohachi · 发表于：Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 年份：2011 · DOI：10.1002/pssc.201000900 · 被引用次数：14 · 研究领域：Advanced ceramic materials synthesis、Semiconductor materials and devices、Metal and Thin Film Mechanics

Abstract A fabrication process of an interface reaction epitaxy (IRE) β‐Si 3 N 4 and an IRE AlN were investigated to produce a double buffer layer (DBL) of AlN(0001)/β‐Si 3 N 4 /Si(111) for the growth of group III nitrides films on Si. The β‐Si 3 N 4 was formed by using adsorbed (ADS) nitrogen atoms irradiated indirectly from a rf‐plasma cell. Two surface structures of the β‐Si 3 N 4 , which were “8 x 8” and “8/3 x 8/3” reconstructions, were fabricated by changing the nitrogen irradiation conditions; complete and incomplete nitridation of Si surface and successive heat treatment up to 875 °C formed the “8 x 8” and “8/3 x 8/3” structures, respectively. IRE AlN was grown by 1 monolayer of Al deposition on the β‐Si 3 N 4 and successive annealing at 875 °C. Al and N polarity DBLs were grown on the “8 x 8” and “8/3 x 8/3” structures, respectively. These results indicated that the polarity of DBL could be controlled by the surface reconstruction of β‐Si 3 N 4 (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)