Agglomeration and Dendritic Growth of Cu/Ti/Si Thin Film

作者：Qijing Lin, Weixuan Jing, Shuming Yang, Zhuangde Jiang, Chenying Wang · 发表于：Journal of Nanomaterials · 年份：2014 · DOI：10.1155/2014/518520 · 被引用次数：13 · 研究领域：Semiconductor materials and interfaces、Copper Interconnects and Reliability、Surface and Thin Film Phenomena

Agglomeration and the transformation from random fractal to dendritic growth have been observed during Cu/Ti/Si thin film annealing. The experimental results show that the annealing temperature, film thickness, and substrate thickness influenced the agglomeration and dendritic growth. Multifractal spectrum is used to characterize the surface morphology quantificationally. The shapes of the multifractal spectra are hook‐like to the left. Value of Δ α increases with the annealing temperature rising, and Δ f increases from 500°C to 700°C but reduces from 700°C to 800°C. The dendritic patterns with symmetrical branches are generated in the surfaces when the thin films were annealed at 800°C.