Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition

作者：Xinsheng Wang, Hongbin Feng, Yongmin Wu, Liying Jiao · 发表于：Journal of the American Chemical Society · 年份：2013 · DOI：10.1021/ja4013485 · 被引用次数：747 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Advanced Photocatalysis Techniques

The controlled synthesis of highly crystalline MoS2 atomic layers remains a challenge for the practical applications of this emerging material. Here, we developed an approach for synthesizing MoS2 flakes in rhomboid shape with controlled number of layers by the layer-by-layer sulfurization of MoO2 microcrystals. The obtained MoS2 flakes showed high crystallinity with crystal domain size of ~10 μm, significantly larger than the grain size of MoS2 grown by other methods. As a result of the high crystallinity, the performance of back-gated field effect transistors (FETs) made on these MoS2 flakes was comparable to that of FETs based on mechanically exfoliated flakes. This simple approach opens up a new avenue for controlled synthesis of MoS2 atomic layers and will make this highly crystalline material easily accessible for fundamental aspects and various applications.