Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode

作者：Hangbing Lv, Ming Wang, Haijun Wan, Yali Song, Wenjing Luo, Peng Zhou, Ting-Ao Tang, Yinyin Lin, Rongqin Huang, S. Song, Jin Wu, He‐Ping Wu, M. H. Chi · 发表于：Applied Physics Letters · 年份：2009 · DOI：10.1063/1.3142392 · 被引用次数：73 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Transition Metal Oxide Nanomaterials

We investigated the switching performance of Cu-oxide films with Al, Pt, and Ti electrodes. Compared with Pt electrode, the Al electrode shows better stability, preferable endurance, and larger resistance ratio. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. However, the sample with pure Ti electrode almost has no switching characteristics. Ti/TiN electrode with thin Ti exhibits good switching behavior. The thickness control of Ti layer is quite critical. So we suggest that the oxygen diffusion in electrode is another important factor for switching performance.