Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering

作者：Yajun Wei, Manijeh Razeghi · 发表于：Physical Review B · 年份：2004 · DOI：10.1103/physrevb.69.085316 · 被引用次数：169 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Electronic and Structural Properties of Oxides

We report the most recent work on the modeling of type-II InAs/GaSb superlattices using the empirical tight binding method in an ${\mathrm{sp}}^{3}{s}^{*}$ basis. After taking into account the antimony segregation in the InAs layers, the modeling accuracy of the band gap has been improved. Our calculations agree with our experimental results within a certain growth uncertainty. In addition, we introduce the concept of ${\mathrm{Ga}}_{x}{\mathrm{In}}_{1\ensuremath{-}x}$ type interface engineering in order to reduce the lattice mismatch between the superlattice and the GaSb (001) substrate to improve the overall superlattice material quality.