A new semiconductor superlattice

作者：G.A. Sai-Halasz, Raphael Tsu, L. Esaki · 发表于：Applied Physics Letters · 年份：1977 · DOI：10.1063/1.89273 · 被引用次数：568 · 研究领域：Semiconductor Quantum Structures and Devices、Quantum and electron transport phenomena、Advanced Semiconductor Detectors and Materials

We treat theoretically, through the use of Bloch functions, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role. The result indicates that this superlattice offers new intriguing features, realizable with the In1−xGaxAs-GaSb1−y Asy system. In addition, the tunneling probability is calculated across a barrier involving this system.