Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition

作者：Takashi Sugino, Kazuhiko Tanioka, Seiji Kawasaki, Junji Shirafuji · 发表于：Japanese Journal of Applied Physics · 年份：1997 · DOI：10.1143/jjap.36.l463 · 被引用次数：122 · 研究领域：Diamond and Carbon-based Materials Research、Semiconductor materials and devices、Metal and Thin Film Mechanics

Polycrystalline boron nitride (BN) films are synthesized using BCl3 and N2 as source gases, by plasma-assisted chemical vapor deposition. BN films consist of nanocrystalline grains of 3 nm in size. The energy gap is estimated to be 6.0 eV from ultraviolet-visible optical transmission measurement. The electrical resistivity is also estimated to be 2×1011 and 4.9×102 Ω· cm for undoped and sulfur (S)-doped BN films, respectively. Electron field emission is observed from S-doped BN film deposited on the Si substrate. The emission current is detected at electric fields higher than 9 V/µ m. The emission current of 10 µ A is obtained at 21 V/µ m. This field emission characteristic is compared with that of polycrystalline diamond films treated with H2 plasma.