Observation of Interface Band Structure by Ballistic-Electron-Emission Microscopy

作者：L. D. Bell, William J. Kaiser · 发表于：Physical Review Letters · 年份：1988 · DOI：10.1103/physrevlett.61.2368 · 被引用次数：449 · 研究领域：Force Microscopy Techniques and Applications、Surface and Thin Film Phenomena、Integrated Circuits and Semiconductor Failure Analysis

A unique ballistic-electron spectroscopy technique has been employed to measure directly semiconductor-band-structure properties at a subsurface interface for the first time. Further, the method, based on scanning tunneling microscopy, enables spatially resolved carrier-transport spectroscopy of interfaces. A theoretical treatment has been developed which accurately accounts for the observed spectroscopic features.