Long wavelength infrared 128*128 Al/sub x/Ga/sub 1-x/As/GaAs quantum well infrared camera and imaging system

作者：G.C. Bethea, B. F. Levine, Moses T. Asom, R. E. Leibenguth, J. W. Stayt, Kenneth G. Glogovsky, Robert Morgan, J.D. Blackwell, William J. Parrish · 发表于：IEEE Transactions on Electron Devices · 年份：1993 · DOI：10.1109/16.239734 · 被引用次数：56 · 研究领域：Advanced Semiconductor Detectors and Materials、Thermography and Photoacoustic Techniques、Semiconductor Quantum Structures and Devices

The authors discuss the development of a long-wavelength (8-14- mu m) 128*128 Al/sub x/Ga/sub 1-x/As/GaAs multiquantum well infrared (MQW IR) imaging system. Highly uniform, high-yield GaAs focal plane arrays, incorporating an integral grating structure for efficient optical coupling, were hybridized to CMOS multiplexers. Excellent imagery, with low noise, a noise equivalent differential temperature (NE Delta T) of less than 10 mK, and a high image contrast signal-to-noise ratio, has been achieved. It is shown that figures of merit concerning array uniformity, such as yield, NE Delta T, and maximum deliverable charge to the CMOS multiplexer are much more relevant variables that affect image quality than D*.>