Charge loss after /sup 60/Co irradiation of flash arrays

作者：G. Cellere, A. Paccagnella, S. Lora, A. Pozza, Gang Tao, A. Scarpa · 发表于：IEEE Transactions on Nuclear Science · 年份：2004 · DOI：10.1109/tns.2004.835056 · 被引用次数：49 · 研究领域：Semiconductor materials and devices、Advanced Memory and Neural Computing、Integrated Circuits and Semiconductor Failure Analysis

Flash memories are the most important among modern nonvolatile memory technologies. We are showing new results on the threshold voltage shifts in Flash memory arrays after /sup 60/Co irradiation. A (relatively) high total dose, exceeding 100 krad (SiO/sub 2/), is needed to induce errors in the array, but threshold voltage shifts are all but negligible even at lower doses. These shifts can be accurately described by using a model which considers the charges generated by irradiation in all the oxides surrounding the floating gate. We are also showing that cycling (endurance) and total ionizing dose effects mutually add.