Interface roughness scattering in GaAs/AlAs quantum wells

作者：H. Sakaki, Takeshi Noda, Kazuhiko Hirakawa, Masaaki Tanaka, T. Matsusue · 发表于：Applied Physics Letters · 年份：1987 · DOI：10.1063/1.98305 · 被引用次数：684 · 研究领域：Semiconductor Quantum Structures and Devices、Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices

We study experimentally and theoretically the influence of interface roughness on the mobility of two-dimensional electrons in modulation-doped AlAs/GaAs quantum wells. It is shown that interface roughness scattering is the dominant scattering mechanism in thin quantum wells with a well thickness Lw<60 Å, where electron mobilities are proportional to L6w, reaching 2×103 cm2/V s at Lw∼55 Å. From detailed comparison between theory and experiment, it is determined that the ‘‘GaAs-on-AlAs’’ interface grown by molecular beam epitaxy has a roughness with the height of 3–5 Å and a lateral size of 50–70 Å.