Evidence for negatively charged DX-center in Si-doped AlGaAs from persistent photoconductivity measurements

作者：I. F. L. Dias, Admilton Gonçalves de Oliveira, J. C. Bezerra, Rogério Chaves Miranda, P. S. S. Guimãraes, J. F. Sampaio, A. S. Chaves · 发表于：Solid State Communications · 年份：1991 · DOI：10.1016/0038-1098(91)90743-f · 被引用次数：4 · 研究领域：Semiconductor materials and devices、Electron and X-Ray Spectroscopy Techniques、Semiconductor Quantum Structures and Devices