Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

作者：David Hou Chi Chow, R. H. Miles, Tom C. Hasenberg, Alan R. Kost, Y.-H. Zhang, Howard L. Dunlap, Linda West · 发表于：Applied Physics Letters · 年份：1995 · DOI：10.1063/1.115354 · 被引用次数：90 · 研究领域：Semiconductor Lasers and Optical Devices、Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices

We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3–5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (broken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 Å /24 Å) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga0.75In0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained.