Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing

作者：Rikiya Suzuki, Shinji Nakagomi, Yoshihiro Kokubun, Naoki Arai, Shigeo Ohira · 发表于：Applied Physics Letters · 年份：2009 · DOI：10.1063/1.3147197 · 被引用次数：259 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Transition Metal Oxide Nanomaterials

We fabricated β-Ga2O3 photodiodes with a Au Schottky contact on a single crystal substrate and investigated the effect of postannealing on the electrical and optical properties of the photodiodes. The ideality factor improved to near unity by annealing at temperatures above 200 °C; however, the reverse leakage current remained nearly unchanged. The responsivity in the wavelength region below 260 nm was enhanced dramatically by a factor of more than 102 after annealing at 400 °C resulting in maximum responsivity of 103 A/W, accompanied with a contrast ratio of about six orders of magnitude between the responsivities at 240 and 350 nm.