Self-frequency-doubled KTiOAsO_4 Raman laser emitting at 573 nm

作者：Zhaojun Liu, Qingpu Wang, Xingyu Zhang, Sasa Zhang, Jun Chang, Shuzhen Fan, Wenjia Sun, Guofan Jin, Xutang Tao, Youxuan Sun, Shaojun Zhang, Zejin Liu · 发表于：Optics Letters · 年份：2009 · DOI：10.1364/ol.34.002183 · 被引用次数：38 · 研究领域：Solid State Laser Technologies、Semiconductor Lasers and Optical Devices、Advanced Fiber Laser Technologies

A self-frequency-doubled KTiOAsO4 (KTA) Raman laser is realized in a diode-end-pumped acousto-optically Q-switched intracavity Raman laser configuration. A 30-mm-long x-cut KTA crystal is used as the Raman medium, and its 671 cm(-1) Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1146 nm Raman laser. Self-frequency doubling of the Raman laser is accomplished in the same KTA crystal, and a 573 nm yellow laser is obtained. With an incident diode power of 10.9 W and a pulse repetition rate of 20.8 kHz, a yellow-laser power of 0.82 W is obtained. The conversion efficiency from diode power to yellow-laser power is 7.5%.