Fano resonances in the excitation spectra of semiconductor quantum wells

作者：D. Y. Oberli, G. Böhm, G. Weimann, J. A. Brum · 发表于：Physical review. B, Condensed matter · 年份：1994 · DOI：10.1103/physrevb.49.5757 · 被引用次数：79 · 研究领域：Semiconductor Quantum Structures and Devices、Molecular Junctions and Nanostructures、Quantum and electron transport phenomena

Fano resonances are observed in the photoluminescence excitation spectra of GaAs-AlAs quantum wells. They originate from the Coulomb interaction that couples a discrete state and a continuum of excitonic states belonging to different pairs of conduction and valence subbands. This interpretation is supported by our calculations and by the behavior of the excitonic line shape in the presence of a magnetic field applied perpendicular to the layers.