The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

作者：W. Shockley · 发表于：Bell System Technical Journal · 年份：1949 · DOI：10.1002/j.1538-7305.1949.tb03645.x · 被引用次数：2138 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor materials and interfaces、Advancements in Semiconductor Devices and Circuit Design

In a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτp)1/2where τpis the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.