Determination of band gap narrowing and hole density for heavily C-doped GaAs by photoluminescence spectroscopy

作者：Z.H. Lu, M. C. Hanna, A. Majerfeld · 发表于：Applied Physics Letters · 年份：1994 · DOI：10.1063/1.110877 · 被引用次数：41 · 研究领域：Semiconductor Quantum Structures and Devices、Advanced Semiconductor Detectors and Materials、Semiconductor materials and interfaces

The energy band gap narrowing effect in heavily C-doped GaAs was investigated using photoluminescence spectroscopy. The band gap was determined over the hole density range 1017–4×1020 cm−3 at 10 and 300 K. The band gap data at low temperatures confirm the available theoretical calculations up to 1020 cm−3. An unexpected temperature dependence of the observed band gap at high doping levels is discussed on the basis of carrier-phonon interactions. We present an analysis of the band gap narrowing effect that can be used for nondestructive measurement of hole densities in the range 1017–4×1020 cm−3.