Electrical conduction mechanism in a-Se 80-x Te x Ga 20 films (0<or=x<or=20)

作者：Zohreh Khani, M.M. Malik, M. Zulfequar, M. Husain · 发表于：Journal of Physics Condensed Matter · 年份：1995 · DOI：10.1088/0953-8984/7/47/017 · 被引用次数：39 · 研究领域：Phase-change materials and chalcogenides、Glass properties and applications、Chalcogenide Semiconductor Thin Films

The dark conductivity and transient photoconductivity measurements on thin films of a-Se 80-x Te x Ga 20 (0<or=x<or=20) have been reported in the temperature range from 148 to 318 K. The results indicate that, at higher temperatures, hopping conduction takes place in the tail states. At lower temperatures the conduction is due to variable-range hopping, which is in fair agreement with the Mott condition of variable-range hopping. The transient photoconductivity measurements show non-exponential decay, and recombination in these glasses may be considered to take place through the valence and conduction bands.