Infrared absorption spectrum studies of the VO defect in fast-neutron-irradiated Czochralski silicon

作者：Shuai Yang, Yangxian Li, Yangxian Li, Qiaoyun Ma, Liu Lili, Xuewen Xu, Pingjuan Niu, Yongzhang Li, Yongzhang Li, Shengli Niu, Hongtao Li · 发表于：Journal of Crystal Growth · 年份：2005 · DOI：10.1016/j.jcrysgro.2005.03.046 · 被引用次数：12 · 研究领域：Semiconductor materials and devices、Silicon Nanostructures and Photoluminescence、Silicon and Solar Cell Technologies