GaS and GaSe Ultrathin Layer Transistors

作者：Dattatray J. Late, Bin Liu, Jiajun Luo, Aiming Yan, H. S. S. Ramakrishna Matte, M. Grayson, C. N. R. Rao, Vinayak P. Dravid · 发表于：Advanced Materials · 年份：2012 · DOI：10.1002/adma.201201361 · 被引用次数：678 · 研究领域：2D Materials and Applications、Perovskite Materials and Applications、Advanced Thermoelectric Materials and Devices

Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.