Heavily Doped p‐Type PbSe with High Thermoelectric Performance: An Alternative for PbTe

作者：Heng Wang, Yanzhong Pei, Aaron D. LaLonde, G. Jeffrey Snyder · 发表于：Advanced Materials · 年份：2011 · DOI：10.1002/adma.201004200 · 被引用次数：538 · 研究领域：Advanced Thermoelectric Materials and Devices、Chalcogenide Semiconductor Thin Films、2D Materials and Applications

PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe. Instead, these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p-type PbSe.