A study of defects induced in GaAs by plasma etching

作者：L. He, W.A. Anderson · 发表于：Solid-State Electronics · 年份：1992 · DOI：10.1016/0038-1101(92)90054-g · 被引用次数：11 · 研究领域：Semiconductor materials and devices、Semiconductor materials and interfaces、Integrated Circuits and Semiconductor Failure Analysis