Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on p‐GaN Thin Film

作者：Xiaomei Zhang, Ming‐Yen Lu, Yue Zhang, Lih-J Chen, Zhong Lin Wang · 发表于：Advanced Materials · 年份：2009 · DOI：10.1002/adma.200802686 · 被引用次数：455 · 研究领域：GaN-based semiconductor devices and materials、ZnO doping and properties、Ga2O3 and related materials

Bright n-ZnO nanowire/p-GaN film hybrid heterojunction light-emitting-diode (LED) devices are fabricated by directly growing n-type ZnO-nanowire arrays on p-GaN wafers. UV–blue electroluminescence emission was observed from the heterojunction diodes, and the heterojunction LED device exhibited a high sensitivity in responding to UV irradiation.