Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi 2 Se 3

作者：Sadashige Matsuo, Tomohiro Koyama, Kazutoshi Shimamura, Tomonori Arakawa, Yoshitaka Nishihara, Daichi Chiba, Kensuke Kobayashi, Teruo Ono, Cui‐Zu Chang, Ke He, Xu-Cun Ma, Qi-Kun Xue · 发表于：Physical Review B · 年份：2012 · DOI：10.1103/physrevb.85.075440 · 被引用次数：95 · 研究领域：Topological Materials and Phenomena、Physics of Superconductivity and Magnetism、Quantum many-body systems

In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi${}_{2}$Se${}_{3}$ thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.