YVO 4 : Eu 3+ photoluminescence films with Bi doping

作者：Zhenxiang Dai, Yuqin Dong, Ganhong Zheng, Shi-Bing Qian, Qian Ma, Guang Li · 发表于：Rare Metals · 年份：2013 · DOI：10.1007/s12598-013-0144-8 · 被引用次数：10 · 研究领域：Luminescence Properties of Advanced Materials、Solid State Laser Technologies、Spectroscopy and Laser Applications

Abstract Y 0.95− x Eu 0.05 VO 4 : x Bi 3+ ( x = 0, 0.02, 0.04, 0.06, 0.08, and 0.10 mol) six photoluminescence films were deposited on glass substrates by sol–gel spin‐coating method. Their morphology and optical property were investigated. The micrographs for the six samples have no change with Bi 3+ doping. The emission spectra result shows that a dominant red emission peak at 620 nm, which is due to the Eu 3+ electric dipole transition of 5 D 0 → 7 F 2 , is observed under excitation wavelengths 254 nm. Furthermore, with the content of Bi 3+ increasing from 0 to 0.08 mol, the emission intensity of samples strengthens and reaches a maximum at x = 0.08 mol, then decreases with the doping content to 0.10 mol.