Highly stable thin film transistors using multilayer channel structure

作者：Pradipta K. Nayak, Zhenwei Wang, Dalaver H. Anjum, Mohamed Nejib Hedhili, Husam N. Alshareef · 发表于：Applied Physics Letters · 年份：2015 · DOI：10.1063/1.4914971 · 被引用次数：55 · 研究领域：Thin-Film Transistor Technologies、Semiconductor materials and devices、ZnO doping and properties

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.