Electrically Driven Single Pyramid InGaN/GaN Micro Light-Emitting Diode Grown on Silicon Substrate

作者：Weijie Chen, Guoheng Hu, Jianliang Jiang, Minggang Liu, Yibin Yang, Peng Xiang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu, Baijun Zhang · 发表于：Journal of Display Technology · 年份：2014 · DOI：10.1109/jdt.2014.2385091 · 被引用次数：8 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、ZnO doping and properties

Electrically driven single-pyramid InGaN/GaN micro light-emitting diode ($\mu$-LED) on silicon substrate has been fabricated and investigated. The$\mu$-LED exhibits a typical p-n diode behavior with a turn-on voltage of 2.5 V and realizes an efficient electroluminescence (EL) under an ultra-small injection current (3$\mu$A). An excellent EL pattern with a high-brightness spot at apex, a hexagonal blue ring around the base of pyramid, and six bright spots at the corners of pyramid base was observed. EL wavelength centered at about 450 nm, and a slight peak shift was found as the injection current increased from 100 to 1000$\mu$A. The small magnitude of spectral shift is attributed to the growth of multiple quantum wells on semi-polar GaN pyramid side facets and its accompanied reduction of the quantum-confined Stark effect. The$\mu$-LED has the promising potential for applying in micro display and electrically driven single photon emitter.