Tunneling Characteristics of NbN/NbN Josephson Junctions with Glow-Discharge-Produced Amorphous Silicon Barriers

作者：Akira Shoji, Fujitoshi Shinoki, S. Kosaka, Hisao Hayakawa · 发表于：Japanese Journal of Applied Physics · 年份：1981 · DOI：10.1143/jjap.20.l587 · 被引用次数：28 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Semiconductor Quantum Structures and Devices

The tunneling characteristics have been systematically measured for NbN/NbN Josephson tunnel junctions with glow-discharge-produced amorphous silicon layers as tunneling barriers. Junction quality parameters, the junction capacitance and the maximum Josephson current density have been obtained as a function of the thickness of the amorphous silicon layer. It is shown that a significant improvement in tunneling characteristics can be achieved by using an amorphous silicon barrier.