Neutron Activation Analysis of Epitaxial Silicon

作者：Graydon B. Larrabee, J. A. Keenan · 发表于：Journal of The Electrochemical Society · 年份：1971 · DOI：10.1149/1.2408320 · 被引用次数：23 · 研究领域：Silicon and Solar Cell Technologies、Thin-Film Transistor Technologies、Semiconductor materials and interfaces

A neutron activation analysis technique has been developed for the analysis of epitaxial silicon. The technique is described in detail along with a table of detection limits. Impurity and dopant concentrations have been profiled through epitaxial films on boron‐ and antimony‐doped substrates. These data along with experience in routine analyses show a factor of 10 to 40 higher impurity concentrations in the outer layer of silicon epitaxial films. Autoradiography combined with profiling has been shown to be a powerful tool for studying doping uniformity.