High‐Density, Ordered Ultraviolet Light‐Emitting ZnO Nanowire Arrays

作者：C.H. Liu, Juan Antonio Zapien, Yuan Yao, Xiangeng Meng, Chun‐Sing Lee, Shoushan Fan, Yeshayahu Lifshitz, S.T. Lee · 发表于：Advanced Materials · 年份：2003 · DOI：10.1002/adma.200304430 · 被引用次数：615 · 研究领域：ZnO doping and properties、Ga2O3 and related materials、GaN-based semiconductor devices and materials

Polycrystalline ZnO nanowires have been grown in anodic aluminum oxide templates using a dry vapor‐deposition method. The nanowires have a high aspect ratio and a uniform density of 1010–1011 cm–2 over a large area (∼ 20 mm2). Room‐temperature photoluminescence measurements show lasing modes between 381 and 389 nm above a threshold power density of 100 kW/cm2 (see Figure).