Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

作者：Xiaoliang He, Degang Zhao, Desheng Jiang, Z.S. Liu, Ping Chen, L. C. Le, Jing Yang, X.J. Li, Shuxiao Zhang, J.J. Zhu, Huanye Wang, Hui Yang · 发表于：Thin Solid Films · 年份：2014 · DOI：10.1016/j.tsf.2014.05.045 · 被引用次数：30 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、Semiconductor materials and devices