Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits

作者：Dmitri E. Nikonov, Ian A. Young · 发表于：IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 年份：2015 · DOI：10.1109/jxcdc.2015.2418033 · 被引用次数：354 · 研究领域：Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design

A new benchmarking of beyond-CMOS exploratory devices for logic integrated circuits is presented. It includes new devices with ferroelectric, straintronic, and orbitronic computational state variables. Standby power treatment and memory circuits are included. The set of circuits is extended to sequential logic, including arithmetic logic units. The conclusion that tunneling field-effect transistors are the leading low-power option is reinforced. Ferroelectric transistors may present an attractive option with faster switching delay. Magnetoelectric effects are more energy efficient than spin transfer torque, but the switching speed of magnetization is a limitation. This article enables a better focus on promising beyond-CMOS exploratory devices.