Oxygen Pipe Diffusion in Sapphire Basal Dislocation

作者：Tsubasa Nakagawa, Atsutomo Nakamura, Isao Sakaguchi, Naoya Shibata, K.P.D. Lagerlöf, Takahisa Yamamoto, Hajime Haneda, Yuichi Ikuhara · 发表于：Journal of the Ceramic Society of Japan · 年份：2006 · DOI：10.2109/jcersj.114.1013 · 被引用次数：50 · 研究领域：Ion-surface interactions and analysis、Nuclear materials and radiation effects、X-ray Diffraction in Crystallography

The oxygen self-diffusion behavior in deformed sapphire single crystals (α-Al2O3 sapphire) with a high density of unidirectional basal dislocations was examined in the temperature range of 1424-1636°C using 18O isotopes and secondary ion mass spectrometry-depth profiling techniques. The pipe and lattice diffusion kinetics were best described by r2Dp=4.6×10-20 exp (-4.8[eV]/kT) [m4/s] and Dl=2.9×10-1 exp (-5.5[eV]/kT) [m2/s], respectively. Both the magnitude of pre-exponential factor and activation energy for oxygen pipe diffusion were in good agreement with that of indirect measurements of pipe diffusion deduced from the annihilation of dislocation dipoles. The measured bulk diffusion coefficient is also in good agreement with previously reported data having activation energies ranged between 5.5-6.1 eV.