Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

作者：Sunglae Cho, Jing Ma, Yun-Ki Kim, Yi Sun, George K. Wong, John B. Ketterson · 发表于：Applied Physics Letters · 年份：1999 · DOI：10.1063/1.125141 · 被引用次数：530 · 研究领域：ZnO doping and properties、Random lasers and scattering media、Copper-based nanomaterials and applications

We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was ∼9 MW/cm2.