Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1f ?) Noise

作者：K. S. Ralls, William J. Skocpol, L. D. Jackel, Richard E. Howard, Linus A. Fetter, R. W. Epworth, D. M. Tennant · 发表于：Physical Review Letters · 年份：1984 · DOI：10.1103/physrevlett.52.228 · 被引用次数：715 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Semiconductor materials and interfaces

Resistance fluctations in submicrometer narrow Si inversion layers are studied over a wide range of temperatures and electron concentrations. Thermally activated switching on and off of discrete resistance increments is observed, caused by the capture and emission of individual electrons at strategically located scatterers (interface traps). The traps have a broad distribution of activation energies, as assumed in accounting for $\frac{1}{f}$ noise in larger devices.