InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface

作者：Jinn‐Kong Sheu, C.M. Tsai, M. L. Lee, Shih‐Chang Shei, Wei‐Chih Lai · 发表于：Applied Physics Letters · 年份：2006 · DOI：10.1063/1.2185622 · 被引用次数：45 · 研究领域：GaN-based semiconductor devices and materials、ZnO doping and properties、Ga2O3 and related materials

GaN -based light-emitting diodes (LEDs) with truncated micropyramids surfaces performed by metalorganic chemical vapor deposition were demonstrated. In this study, a growth-interruption step and an Mg-treatment process were simultaneously performed to create multiple truncated micropyramids on LED surface. Experimental results indicated that GaN-based LEDs with the truncated micropyramids on the top surface demonstrate improved external efficiency of around 60% at 20mA. It is worth noting that the typical 20mA driven forward voltage is only 0.15V higher than that of conventional LEDs (LEDs with specular surface).