Raman study of structural order of a-SiNx:H and its change upon thermal annealing

作者：Yan Wang, Ruifeng Yue, Hexiang Han, Xianbo Liao · 发表于：Journal of Non-Crystalline Solids · 年份：2001 · DOI：10.1016/s0022-3093(01)00797-9 · 被引用次数：16 · 研究领域：Thin-Film Transistor Technologies、Silicon Nanostructures and Photoluminescence、Semiconductor materials and devices