Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps in GaAs1−xPx

作者：Don R. Scifres, N. Holonyak, C. B. Duke, George G. Kleiman, A. Barry Kunz, M. George Craford, W. O. Groves, Arno H. Herzog · 发表于：Physical Review Letters · 年份：1971 · DOI：10.1103/physrevlett.27.191 · 被引用次数：59 · 研究领域：Atomic and Molecular Physics、Advanced Chemical Physics Studies、Quantum and electron transport phenomena

Line emission above the direct interband threshold is observed at 77\ifmmode^\circ\else\textdegree\fi{}K in $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{P}}_{x}:\mathrm{N}$ for $x=0.19 \mathrm{and} 0.21$. This emission is identified with a sharp resonance state of the N isoelectronic trap. This state owes its existence both to the attractive short-range nature of the trap potential and to the details of the energy-band structure of $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{P}}_{x}$.