Gate oxide prepared by nanometre silicon wet oxidation at low temperature for Si/SiGe PMOSFET application

作者：Peixia Yang, J C Li, Minggui Xie, Ming Yang, Liang He, K C Li, Kaizhou Tan, J Zhang · 发表于：Semiconductor Science and Technology · 年份：2001 · DOI：10.1088/0268-1242/16/12/304 · 被引用次数：1 · 研究领域：Semiconductor materials and devices、Silicon Nanostructures and Photoluminescence、Semiconductor materials and interfaces

A high-quality thin gate oxide for application in Si/SiGe heterostructure PMOSFETs is prepared by nanometre silicon wet oxidation at 750 °C by taking full advantage of the peculiar phase in polysilicon thermal oxidation. The combination of low temperature and a short processing time prevents strain relaxation and Ge outdiffusion in the compressively strained SiGe channel. Its structural stability and interface quality are studied by x-ray double-crystal diffraction. Results of C - V characteristics and breakdown measurements indicate that the gate oxide exhibits a low fixed oxide charge density and a high dielectric breakdown field. Employing this gate oxide, Si/SiGe PMOSFETs with good output characteristics have been successfully fabricated.