High reliability and high performance of 9xx-nm single emitter laser diodes

作者：L. Bao, Paul O. Leisher, J. Wang, Mark DeVito, D. Xu, Mike Grimshaw, Weimin Dong, X. Guan, S. Zhang, Chunzheng Bai, John G. Bai, Damian Wise, R. Martinsen · 发表于：Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 年份：2011 · DOI：10.1117/12.875869 · 被引用次数：27 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices

Improved performance and reliability of 9xx nm single emitter laser diodes are presented. To date, over 15,000 hours of accelerated multi-cell lifetest reliability data has been collected, with drive currents from 14A to 18A and junction temperatures ranging from 60°C to 110°C. Out of 208 devices, 14 failures have been observed so far. Using established accelerated lifetest analysis techniques, the effects of temperature and power acceleration are assessed. The Mean Time to Failure (MTTF) is determined to be >30 years, for use condition 10W and junction temperature 353K (80°C), with 90% statistical confidence.