Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers

作者：J. L. Zilko, L.J.P. Ketelsen, Y. Twu, D. P. Wilt, S.G. Napoltz, Jan Blaha, K. E. Strege, V. G. Riggs, D.L. Van Haren, Suet Yi Leung, P.M. Nitzche, J. Long, C. B. Roxlo, G. Przyblek, John Lopata, Marlin W. Focht, J. Koszi · 发表于：IEEE Journal of Quantum Electronics · 年份：1989 · DOI：10.1109/3.35720 · 被引用次数：51 · 研究领域：Semiconductor Lasers and Optical Devices、Photonic and Optical Devices、Semiconductor Quantum Structures and Devices

The capped-mesa buried-heterostructure distributed-feedback (CMBH-DFB) laser structure requires three epitaxial growths and is designed to allow good control of the width of the active layer using straightforward chemical etching techniques. The base structure, which contains the active layer, was fabricated using a variety of epitaxial techniques: liquid-phase epitaxy, hydride vapor-phase epitaxy (VPE) and metalorganic vapor-phase epitaxy (MOVPE). The final cap growth was done using hydride VPE. High yields of low-threshold high-power DFB lasers were produced from a number of wafers at emission wavelengths of 1.3 and 1.55 mu m.>