Observation of the negative and positive persistent photoconductivity phenomena in silicon planar-doped GaAs

作者：M.I.N. da Silva, J. A. Corrêa F., J. C. Bezerra, A. G. de Oliveira · 发表于：Solid State Communications · 年份：1994 · DOI：10.1016/0038-1098(94)90765-x · 被引用次数：5 · 研究领域：Semiconductor Quantum Structures and Devices、Quantum and electron transport phenomena、Advancements in Semiconductor Devices and Circuit Design