Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

作者：T. Ohachi, Nobuhiko Yamabe, H. Shimomura, Takashi Shimamura, Osamu Ariyada, M. Wada · 发表于：Journal of Crystal Growth · 年份：2009 · DOI：10.1016/j.jcrysgro.2009.01.069 · 被引用次数：16 · 研究领域：GaN-based semiconductor devices and materials、Plasma Diagnostics and Applications、Metal and Thin Film Mechanics