Mid-Wavelength Infrared nBn for HOT Detectors

作者：Antoni Rogalski, Piotr Marcin Martyniuk · 发表于：Journal of Electronic Materials · 年份：2014 · DOI：10.1007/s11664-014-3161-y · 被引用次数：22 · 研究领域：Advanced Semiconductor Detectors and Materials、Infrared Target Detection Methodologies、Semiconductor Quantum Structures and Devices

Recently, new strategies to achieve high-operating-temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, alternative materials such as superlattices, and multistage (cascade) infrared devices. In the case of nBn detectors, the barriers must be correctly engineered and correctly located in the device structure to achieve optimal performance. This paper presents the limitations of barrier unipolar devices and the progress in their development for HOT operation in the mid-wavelength infrared range. Their performance is compared with state-of-the-art HgCdTe photodiodes.