Mn-doped AlN nanowires with room temperature ferromagnetic ordering

作者：Yuan Yang, Qiang Zhao, X. Z. Zhang, Z. G. Liu, Chao Zou, Bowen Shen, Dapeng Yu · 发表于：Applied Physics Letters · 年份：2007 · DOI：10.1063/1.2475276 · 被引用次数：40 · 研究领域：ZnO doping and properties、GaN-based semiconductor devices and materials、Metal and Thin Film Mechanics

Mn-doped AlN nanowires were synthesized by in situ doping of Mn using a chemical vapor deposition method. Analyses of microstructure and chemical compositions indicate that the as-prepared samples were homogenously Mn-doped AlN nanowires. The low temperature photoluminescence, and magnetization as a function applied magnetic field of the Mn-doped AlN nanowires were investigated. A Curie temperature higher than 300K was observed from the as-doped nanowires. The room temperature ferromagnetic properties of the synthesized Mn-doped AlN nanowires make it an excellent candidate for applications in future spintronic nanodevices.