Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

作者：W. Wang, K. Allaart, D. Lenstra · 发表于：Electronics Letters · 年份：2004 · DOI：10.1049/el:20046945 · 被引用次数：16 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices、Optical Network Technologies

It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy. Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.