Atom-selective imaging of the GaAs(110) surface

作者：Randall M. Feenstra, Joseph A. Stroscio, J. Tersoff, Aaron P. Fein · 发表于：Physical Review Letters · 年份：1987 · DOI：10.1103/physrevlett.58.1192 · 被引用次数：617 · 研究领域：Force Microscopy Techniques and Applications、Surface and Thin Film Phenomena、Advanced Materials Characterization Techniques

We report the first voltage-dependent scanning tunneling microscope images of a compound semiconductor surface, GaAs(110). Images show either only Ga atoms, or only As atoms, depending on the bias voltage. By combining voltage-dependent images with theoretical calculations, we quantitatively determine surface structural parameters which cannot be inferred from the images alone.