Exchange Interaction of Manganese 3d 5 States with Band Electrons in Cd 1− x Mn x Te

作者：J. A. Gaj, Jozef Ginter, Robert R. Galazka · 发表于：physica status solidi (b) · 年份：1978 · DOI：10.1002/pssb.2220890241 · 被引用次数：254 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Chalcogenide Semiconductor Thin Films

Abstract The influence of a system of magnetic‐field‐aligned paramagnetic ions on the conduction and valence band electron states is studied. A model applicable to large‐gap semiconductors is presented, in which the direct influence of a magnetic field on the band electron states is neglected. This assumption allows to calculate the E ( k ) dependence in the presence of a magnetic field. The calculations are performed in the Kohn‐Luttinger model producing a strongly anisotropic and nonparabolic structure. As an illustration of the obtained results measurements of the exciton reflection structure in a magnetic field are presented on the ternary semiconductor CdMnTe. The ratio of the exchange integrals of conduction band electrons and valence band electrons to manganese ions is estimated to α/β = −0.25.